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TC1301 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Low Noise and Medium Power GaAs FETs - Transcom

भाग संख्या TC1301
समारोह Low Noise and Medium Power GaAs FETs
मैन्युफैक्चरर्स Transcom 
लोगो Transcom लोगो 
पूर्व दर्शन
1 Page
		
<?=TC1301?> डेटा पत्रक पीडीएफ

TC1301 pdf
TC1301
REV.2_04/12/2004
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
Parameter
Rating
VDS
VGS
IDS
IGS
Pin
www.DataSheet4U.coPmT
TCH
TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
7.0 V
-3.0 V
IDSS
600 µA
20 dBm
800 mW
175 °C
- 65 °C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25 °C)
VDS = 4 V, IDS = 50 mA
Frequency NFopt
GA
Γopt Rn/50
MAG ANG
2 0.36 19.7 0.88 15 0.28
4 0.48 16.6 0.74 39 0.18
6 0.59 14.3 0.62 64 0.15
8 0.70 12.7 0.55 92 0.12
10 0.78 11.7 0.50 120 0.09
12 0.85 10.9 0.49 148 0.06
14 0.98 10.4 0.50 174 0.04
16 1.12 9.8 0.51 -162 0.04
18 1.27 9.0 0.54 -141 0.07
CHIP DIMENSIONS
760± 12
DD D
SG
S
G
SG
S
290± 12
Units: Micrometers
Chip Thickness: 100
Gate Pad: 75 x 70
Drain Pad: 80 x 70
Source Pad: 75 x 80
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/6

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डाउनलोड[ TC1301 Datasheet.PDF ]


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