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TC1300 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 300 mA CMOS LDO - Microchip Technology

भाग संख्या TC1300
समारोह 300 mA CMOS LDO
मैन्युफैक्चरर्स Microchip Technology 
लोगो Microchip Technology लोगो 
पूर्व दर्शन
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<?=TC1300?> डेटा पत्रक पीडीएफ

TC1300 pdf
TC1300
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage ....................................................................6.5V
Output Voltage ................................. (VSS - 0.3) to (VIN + 0.3)
Power Dissipation ......................... Internally Limited (Note 6)
Operating Junction Temperature, TJ ....... – 40°C < TJ< 150°C
Maximum Junction Temperature, Tj .............................. 150°C
Storage Temperature .................................. – 65°C to +150°C
Maximum Voltage on Any Pin ............. (VSS-0.3) to (VIN+0.3)
*Notice: Stresses above those listed under “maximum rat-
ings” may cause permanent damage to the device. This is a
www.DataSheet4Ustht.rocesosems orratainngy
only and functional operation
other conditions above those
of the device at
indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS
PIN DESCRIPTIONS
Pin
RESET
VOUT
GND
Bypass
SHDN
NC
VIN
VDET
Description
RESET output remains low while VDET is
below the reset voltage threshold and for
300 msec after VDET rises above reset thesh-
old.
Regulated Voltage Output
Ground Terminal
Reference Bypass Input. Connecting an
optional 470 pF to this input further reduces
output noise.
Shutdown Control Input. The regulator is fully
enabled when a logic high is applied to this
input. The regulator enters shutdown when a
logic low is applied to this input. During shut-
down, regulator output voltage falls to zero,
RESET output remains valid and supply cur-
rent is reduced to 30 µA (typ.).
No connect
Power Supply Input
Detected Input Voltage. VDET and VIN can be
connected together.
VIN = VOUT + 1V, IL = 0.1 mA, CL = 3.3 µF, SHDN > VIH, TA = 25°C, unless otherwise noted. BOLDFACE type specifications apply
for junction temperature (Note 8) of -40°C to +125°C.
Parameters
Sym
Min Typ Max Units
Conditions
Input Operating Voltage
VIN
2.7
6.0 V Note 7
Maximum Output Current
IOUTMAX
300
— mA
Output Voltage
VOUT
— VR ± 0.5%
VR - 2.5% VR + 2.5%
V Note 1
VOUT Temperature Coefficient
VOUT/T
25
— ppm/°C Note 2
Line Regulation
VOUT/VIN
0.02
0.35
% (VR + 1V) < VIN < 6V
Load Regulation
VOUT/VOUT
0.5
2.0 % IL = 0.1 mA to IOUTMAX, Note 3
Note 1: VR is the regulator output voltage setting.
2: TCVOUT = (---V----O-----U-----T---M------A---V-X---O--–--U---V--T--O---×-U-----T---T-M-----I---N----)----×-----1--0----6-
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5: Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
6:
excluding load
The maximum
or line regulation effects. Specifications are
allowable power dissipation is a function of
afomrbaiecnutrtreemntppeuralsteureeq, uthael tmo aILxMimAXumat
VIN = 6V for t = 10 msec.
allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7: The minimum VIN has to meet two conditions: VIN 2.7V and VIN (VR + VDROPOUT).
8: The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
DS21385C-page 2
2002 Microchip Technology Inc.

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