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FZ800R16KF4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Modules - eupec GmbH

भाग संख्या FZ800R16KF4
समारोह IGBT Modules
मैन्युफैक्चरर्स eupec GmbH 
लोगो eupec GmbH लोगो 
पूर्व दर्शन
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<?=FZ800R16KF4?> डेटा पत्रक पीडीएफ

FZ800R16KF4 pdf
IGBT-Module
FZ 800 R 16 KF4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Isolations-Prüfspannung
insulation test voltage
tp=1 ms
tC=25°C, Transistor /transistor
tp=1ms
RMS, f=50 Hz, t= 1 min.
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage
iC=800A, vGE=15V, tvj=25°C
Gate-Schwellenspannung
Eingangskapazität
gate threshold voltage
input capacity
iC=800A, vGE=15V, tvj=125°C
iC=65mA, vCE=vGE, tvj=25°C
fO=1MHz,tvj=25°C,vCE=25V, vGE=0V
Kollektor-Emitter Reststrom
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collector-emitter cut-off current
vCE=1600V, vGE=0V, tvj=25°C
vCE=1600V, vGE=0V, tvj=125°C
Gate-Emitter Reststrom
gate leakage current
vCE=0V, vGE=20V, tvj=25°C
Emitter-Gate Reststrom
Einschaltzeit (induktive Last)
Speicherzeit (induktive Last)
Fallzeit (induktive Last)
gate leakage current
turn-on time (inductive load)
storage time (inductive load)
fall time (inductive load)
vCE=0V, vEG=20V, tvj=25°C
iC=800A,vCE=900V,vL=±15V
vL=±15V, RG=2,4, tvj=25°C
vL=±15V, RG=2,4, tvj=125°C
iC=800A,vCE=900V,vL=±15V
vL=±15V, RG=2,4, tvj=25°C
vL=±15V, RG=2,4, tvj=125°C
iC=800A,vCE=900V,vL=±15V
vL=±15V, RG=2,4, tvj=25°C
vL=±15V, RG=2,4, tvj=125°C
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Inversdiode / Inverse diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
iC=800A,vCE=900V,vL=±15V
RG=2,4, tvj=125°C, LS=70nH
iC=800A,vCE=900V,vL=±15V
RG=2,4, tvj=125°C, LS=70nH
iF=800A, vGE=0V, tvj=25°C
iF=800A, vGE=0V, tvj=125°C
iF=800A, -diF/dt=4,5kA/µs
vRM=900V, vEG=10V, tvj=25°C
vRM=900V, vEG=10V, tvj=125°C
iF=800A, -diF/dt=4,5kA/µs
vRM=900V, vEG=10V, tvj=25°C
vRM=900V, vEG=10V, tvj=125°C
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
Höchstzul. Sperrschichttemperatur
Betriebstemperatur
Lagertemperatur
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
Transistor / transistor, DC
Diode /diode, DC
pro Module / per Module
VCES
IC
ICRM
Ptot
VGE
IF
IFRM
VISOL
vCE sat
vGE(TO)
Cies
iCES
iGES
iEGS
ton
ts
tf
min. typ.
- 3,3
- 4,4
4,5 5,5
- 130
-6
- 60
--
--
1600 V
800 A
1600 A
6250 W
± 20 V
800 A
1600 A
3,4 kV
max.
3,7 V
4,8 V
6,5 V
- nF
- mA
- mA
400 nA
400 nA
- 0,8
-1
- µs
- µs
- 1,1
- 1,3
- µs
- µs
- 0,25
- 0,3
- µs
- µs
Eon
Eoff
vF
IRM
Qr
RthJC
RthCK
tvj max
tc op
tstg
- 340
- 180
- 2,4
- 2,2
- 540
- 660
- 100
- 220
- mWs
- mWs
2,8 V
-V
-A
-A
- µAs
- µAs
0,02 °C/W
0,05 °C/W
0,01 °C/W
150 °C
-40...+125 °C
-40...+125 °C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation
Anzugsdrehmoment f. mech. Befestigung / mounting torque
terminals M6 / tolerance ±10%
M1
Anzugsdrehmoment f. elektr. Anschlüsse / terminal connection torque
terminals M4 / tolerance +5/-10%
M2
terminals M8
Gewicht
weight
G
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
Al2O3
3 Nm
2 Nm
8...10 Nm
ca. 1500 g
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection
tfg = 10 µs
VCC = 1000 V
vL = ±15V
vCEM = 1300 V
RGF = RGR = 2,4
iCMK1 8000 A
tvj = 125°C
iCMK2 6000 A
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v
CEM = VCES - 15nH x |di c/dt|

विन्यास 4 पेज
डाउनलोड[ FZ800R16KF4 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FZ800R16KF4IGBT Moduleseupec GmbH
eupec GmbH


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