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S9013 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Epitaxial Planar Transistor - Galaxy

भाग संख्या S9013
समारोह NPN Silicon Epitaxial Planar Transistor
मैन्युफैक्चरर्स Galaxy 
लोगो Galaxy लोगो 
पूर्व दर्शन
1 Page
		
<?=S9013?> डेटा पत्रक पीडीएफ

S9013 pdf
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
S9013
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
www.DataShEeemt4iUtt.ecor-mbase breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=100μA,IE=0
IC=0.1mA,IB=B 0
IE=100μA,IC=0
40
25
5
V
V
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
ICEO
IEBO
VCB=40V,IE=0
VCE=20V,IB=B 0
VEB=5V,IC=0
0.1 μA
0.1 μA
0.1 μA
DC current gain
VCE=1V,IC=50mA
120
hFE
VCE=1V,IC=500mA
40
400
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
Transition frequency
fT
IC=500mA, IB=B 50mA
IC=500mA, IB=B 50mA
VCE=6V, IC= 20mA
f=30MHz
150
0.6 V
1.2 V
MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
120-200
H
200-350
J
300-400
Document number: BL/SSSTC082
Rev.A
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