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GB02N120 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SGB02N120 - Infineon Technologies AG

भाग संख्या GB02N120
समारोह SGB02N120
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
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<?=GB02N120?> डेटा पत्रक पीडीएफ

GB02N120 pdf
wwwww..DDaatataSSheheete4tU4.Uco.cmom
SGP02N120, SGB02N120
SGD02N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB1)
Symbol
Conditions
RthJC
RthJA
RthJA
TO-220AB
TO-263AB(D2PAK)
Max. Value
2.0
62
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V, IC=100µA
VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
VGE(th)
ICES
IGES
gfs
IC=100µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=2A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=2A
VGE=15V
TO-220AB
VGE=15V,tSC10µs
100VVCC1200V,
Tj 150°C
min.
1200
2.5
-
3
-
-
-
-
-
-
-
-
-
Value
Unit
typ. max.
- -V
3.1 3.6
3.7 4.3
45
µA
- 25
- 100
- 100 nA
1.5 - S
205 250 pF
20 25
12 14
11 - nC
7 - nH
24 - A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Jul-02

विन्यास 12 पेज
डाउनलोड[ GB02N120 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
GB02N120 SGB02N120Infineon Technologies AG
Infineon Technologies AG


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