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GB10B60KD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IRGB10B60KD - International Rectifier

भाग संख्या GB10B60KD
समारोह IRGB10B60KD
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=GB10B60KD?> डेटा पत्रक पीडीएफ

GB10B60KD pdf
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IRG/B/S/SL10B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
VFM
IGES
Collector-to-Emitter Breakdown Voltage 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage 1.5
–––
Gate Threshold Voltage
3.5
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
Zero Gate Voltage Collector Current –––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
––– ––– V
0.3 ––– V/°C
1.80 2.20
2.20 2.50 V
4.5 5.5 V
-10 ––– mV/°C
7.0 ––– S
3.0 150 µA
300 700
1.30 1.45
1.30 1.45 V
––– ±100 nA
VGE = 0V, IC = 500µA
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 10A, VGE = 15V
5, 6,7
IC = 10A, VGE = 15V TJ = 150°C 9,10,11
VCE = VGE, IC = 250µA
9,10,11
VCE = VGE, IC = 1.0mA, (25°C-150°C) 12
VCE = 50V, IC = 10A, PW=80µs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 10A
IC = 10A
TJ = 150°C
8
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Erec
trr
Irr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Min. Typ. Max.
––– 38 –––
––– 4.3 –––
––– 16.3 –––
––– 140 247
––– 250 360
––– 390 607
––– 30 39
––– 20 29
––– 230 262
––– 23 32
––– 230 340
––– 350 464
––– 580 804
––– 30 39
––– 20 28
––– 250 274
––– 26 34
––– 620 –––
––– 62 –––
––– 22 –––
FULL SQUARE
10 ––– –––
––– 245 330
––– 90 105
––– 19 22
Units
nC
µJ
ns
µJ
ns
pF
µs
µJ
ns
A
Conditions
IC = 10A
VCC = 400V
VGE = 15V
IC = 10A, VCC = 400V
VGE = 15V,RG = 47Ω, L = 200µH
Ls = 150nH
TJ = 25°C ƒ
IC = 10A, VCC = 400V
VGE = 15V, RG = 47Ω, L = 200µH
Ls = 150nH, TJ = 25°C
Ref.Fig.
CT1
CT4
CT4
IC = 10A, VCC = 400V
CT4
VGE = 15V,RG = 47Ω, L = 200µH
13,15
Ls = 150nH
TJ = 150°C ƒ WF1WF2
IC = 10A, VCC = 400V
14, 16
VGE = 15V, RG = 47Ω, L = 200µH
CT4
Ls = 150nH, TJ = 150°C
WF1
WF2
VGE = 0V
VCC = 30V
f = 1.0MHz
TJ = 150°C, IC = 44A, Vp =600V
4
VCC = 500V, VGE = +15V to 0V,RG = 47CT2
TJ = 150°C, Vp =600V,RG = 47
CT3
VCC = 360V, VGE = +15V to 0V
TJ = 150°C
VCC = 400V, IF = 10A, L = 200µH
VGE = 15V,RG = 47Ω, Ls = 150nH
WF4
17,18,19
20, 21
CT4,WF3
Note  to „ are on page 15
2
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