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GP9962 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

भाग संख्या GP9962
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स GTM 
लोगो GTM लोगो 
पूर्व दर्शन
1 Page
		
<?=GP9962?> डेटा पत्रक पीडीएफ

GP9962 pdf
www.DataSheet4U.com
ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
40
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.1
- V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 11 -
S VDS=10V, ID=7A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=40V, VGS=0
- 25 uA VDS=32V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 28 m VGS=10V, ID=7A
- 40
VGS=4.5V, ID=5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 13 20
ID=7A
Qgs - 4 - nC VDS=32V
Qgd - 7 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 10 -
VDS=20V
Tr
-8-
ID=1A
ns VGS=10V
Td(off) - 26 -
RG=3.3
Tf - 9 -
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1170 1870
VGS=0V
- 180 -
pF VDS=25V
- 116 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
24
18
Max.
1.2
-
-
Unit Test Conditions
V IS=1.7A, VGS=0V
ns IS=7A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90 /W when mounted on Min. copper pad.
2/4

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डाउनलोड[ GP9962 Datasheet.PDF ]


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