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GP9960 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

भाग संख्या GP9960
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स GTM 
लोगो GTM लोगो 
पूर्व दर्शन
1 Page
		
<?=GP9960?> डेटा पत्रक पीडीएफ

GP9960 pdf
www.DataSheet4U.com
ISSUED DATE :2005/08/08
REVISED DATE :
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
40
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.032
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 25 -
S VDS=10V, ID=7A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=40V, VGS=0
- 25 uA VDS=32V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 25 m VGS=10V, ID=7A
- 40
VGS=4.5V, ID=5A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 14.7 -
ID=7A
Qgs - 7.1 - nC VDS=20V
Qgd - 6.8 -
VGS=4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
- 11.5 -
- 6.3 -
- 28.2 -
- 12.6 -
VDS=20V
ID=1A
ns VGS=10V
RG=3.3
RD=20
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1725 -
- 235 -
- 145 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Symbol
VSD
IS
Min.
-
-
Typ.
-
-
Max.
1.3
1.54
Unit Test Conditions
V IS=2.3A, VGS=0V
A VD=VG=0V, VS=1.3V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Mounted on 1 in2 copper pad of FR4 board; 90 /W when mounted on Min. copper pad.
2/4

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डाउनलोड[ GP9960 Datasheet.PDF ]


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