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KHB019N20F2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N CHANNEL MOS FIELD EFFECT TRANSISTOR - KEC

भाग संख्या KHB019N20F2
समारोह N CHANNEL MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स KEC 
लोगो KEC लोगो 
पूर्व दर्शन
1 Page
		
<?=KHB019N20F2?> डेटा पत्रक पीडीएफ

KHB019N20F2 pdf
KHB019N20P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=200V, VGS=0V,
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Vth
IGSS
RDS(ON)
VDS=VGS, ID=250 A
VGS= 30V, VDS=0V
VGS=10V, ID=9.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=160V, ID=19A
VGS=10V
(Note4,5)
Qgd
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
td(on)
tr
td(off)
tf
Ciss
VDD=100V
RL=5
RG=25
(Note4,5)
Reverse Transfer Capacitance
Crss VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Source-Drain Diode Ratings
Coss
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=19A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=19A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =1mH, IS=19A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 19A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
200 - - V
- 0.18 - V/
- - 10 A
2 - 4V
- - 100 nA
- 0.14 0.18
- 35 44
- 4.8 - nC
- 18 -
- 12 30
- 33 70
ns
- 130 270
- 75 160
- 900 1170
-
213 277
pF
- 80 104
- - 19
A
- - 76
- - 1.5 V
- 215 -
ns
-2-
C
2007. 5. 10
Revision No : 0
2/7

विन्यास 7 पेज
डाउनलोड[ KHB019N20F2 Datasheet.PDF ]


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