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GT2531 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

भाग संख्या GT2531
समारोह N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स GTM 
लोगो GTM लोगो 
पूर्व दर्शन
1 Page
		
<?=GT2531?> डेटा पत्रक पीडीएफ

GT2531 pdf
ISSUED DATE :2006/01/23
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
16
-
0.2
-
-
-
0.01
-
9
-
-
-
1.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=5V, ID=3A
nA VGS= ± 8V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=16V, VGS=0
- 25 Ua VDS=12V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 58
VGS=4.5V, ID=3A
- 70 m VGS=2.5V, ID=2A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Rg
- - 85
VGS=1.8V, ID=1A
- 7 12
ID=3A
- 0.6 - nC VDS=10V
-2-
VGS=4.5V
-6-
VDS=10V
- 11 -
ID=1A
-
17
-
ns VGS=5V
RG=3.3
-3-
RD=10
- 360 580
VGS=0V
- 50 - pF VDS=15V
- 40 -
f=1.0MHz
- 1.4 2.0
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.3
Unit Test Conditions
V IS=0.9A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
GT2531
Page: 2/7

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