DataSheet.in

GT2530 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

भाग संख्या GT2530
समारोह N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
मैन्युफैक्चरर्स GTM 
लोगो GTM लोगो 
पूर्व दर्शन
1 Page
		
<?=GT2530?> डेटा पत्रक पीडीएफ

GT2530 pdf
ISSUED DATE :2006/01/23
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.02
-
4
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=5V, ID=3A
nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Rg
-
-
-
-
-
-
-
-
-
-
-
-
-
- 72 m VGS=10V, ID=3A
- 125
VGS=4.5V, ID=2A
35
ID=3A
1 - nC VDS=25V
2-
VGS=4.5V
6-
VDS=15V
8-
ID=1A
11
-
ns VGS=10V
RG=3.3
2-
RD=15
170 270
50 -
35 -
VGS=0V
pF VDS=25V
f=1.0MHz
0.5 0.8
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
14
7
Max.
1.3
-
-
Unit Test Conditions
V IS=0.9A, VGS=0V
ns IS=3A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
GT2530
Page: 2/7

विन्यास 7 पेज
डाउनलोड[ GT2530 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
GT2530N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFETGTM
GTM
GT2531N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFETGTM
GTM


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English