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MID150-12A4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT Modules Short Circuit SOA Capability Square RBSOA - IXYS Corporation

भाग संख्या MID150-12A4
समारोह IGBT Modules Short Circuit SOA Capability Square RBSOA
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=MID150-12A4?> डेटा पत्रक पीडीएफ

MID150-12A4 pdf
MII 150-12 A4 MID 150-12 A4
MDI 150-12 A4
Symbol
V(BR)CES
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
RthJC
RthJS
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V
IC = 4 mA, VCE = VGE
VCE = VCES
VCE = 0 V, VGE = ±20 V
IC = 100 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
VCE = 25 V, VGE = 0 V, f = 1 MHz
Inductive load, TJ = 125°C
IC = 100 A, VGE = ±15 V
VCE = 600 V, RG = 10 W
with heatsink compound
1200
4.5
V
6.5 V
7.5 mA
11 mA
±400 nA
2.2 2.7 V
6.6 nF
1 nF
0.44 nF
100 ns
70 ns
500 ns
70 ns
15 mJ
11.5 mJ
0.17 K/W
0.33 K/W
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
RthJC
RthJS
IF = 100 A, VGE = 0 V,
IF = 100 A, VGE = 0 V, TJ = 125°C
TC = 25°C
TC = 80°C
IF = 100 A, VGE = 0 V, -diF/dt = 800 A/ms
TJ = 125°C, VR = 600 V
with heatsink compound
2.3 2.5 V
1.8 1.9 V
200 A
130 A
80 A
200 ns
0.33 K/W
0.66 K/W
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.5 V; R0 = 10.2 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 5.5 mW
Thermal Response
© 2000 IXYS All rights reserved
IGBT (typ.)
Cth1 = 0.27 J/K; Rth1 = 0.163 K/W
Cth2 = 0.63 J/K; Rth2 = 0.004 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.19 J/K; Rth1 = 0.326 K/W
Cth2 = 0.36 J/K; Rth2 = 0.007 K/W
2-4

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डाउनलोड[ MID150-12A4 Datasheet.PDF ]


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MID150-12A4IGBT Modules Short Circuit SOA Capability Square RBSOAIXYS Corporation
IXYS Corporation


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