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IRF530NL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HEXFET Power MOSFET - International Rectifier

भाग संख्या IRF530NL
समारोह HEXFET Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF530NL?> डेटा पत्रक पीडीएफ

IRF530NL pdf
IRF530NS/IRF530NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
EAS
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚‡
Min. Typ. Max.
100 ––– –––
––– 0.11 –––
––– ––– 90
2.0 ––– 4.0
12 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 37
––– ––– 7.2
––– ––– 11
––– 9.2 –––
––– 22 –––
––– 35 –––
––– 25 –––
––– 4.5 –––
––– 7.5 –––
––– 920 –––
––– 130 –––
––– 19 –––
––– 340… 93†
Units
V
V/°C
m
V
S
µA
nA
nC
ns
nH
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA ‡
VGS = 10V, ID = 9.0A „
VDS = VGS, ID = 250µA
VDS = 50V, ID = 9.0A„‡
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 9.0A
VDS = 80V
VGS = 10V, See Fig. 6 and 13
VDD = 50V
‡
ID = 9.0A
RG = 12
VGS = 10V, See Fig. 10 „‡
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5 ‡
IAS = 9.0A, L = 2.3mH
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 17
––– ––– 60
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V „
––– 93 140 ns TJ = 25°C, IF = 9.0A
––– 320 480 nC di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 2.3mH
RG = 25, IAS = 9.0A, VGS=10V (See Figure 12)
ƒ ISD 9.0A, di/dt 410A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
‡ Uses IRF530N data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
2 www.irf.com

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