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STE70NM60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel Power MOSFET - ST Microelectronics

भाग संख्या STE70NM60
समारोह N-channel Power MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=STE70NM60?> डेटा पत्रक पीडीएफ

STE70NM60 pdf
STE70NM60
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1) ISD 70A, di/dt 400 A/µs, VDD V(BR)DSS, Tj TJMAX.
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
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AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Value
600
600
±30
70
44
280
600
6
4.5
15
–65 to 150
150
0.2
30
300
Max Value
30
1.4
Unit
V
V
V
A
A
A
W
KV
W/°C
V/ns
°C
°C
°C/W
°C/W
°C
Unit
A
J
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STE70NM60N-channel Power MOSFETST Microelectronics
ST Microelectronics


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