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FDMA430NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single N-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA430NZ
समारोह Single N-Channel 2.5V Specified PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA430NZ?> डेटा पत्रक पीडीएफ

FDMA430NZ pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
VGS = 0V , ID = 250µA
ID = 250µA,
Referenced to 25°C
VDS = 24V, VGS = 0V,
VGS = ±12V, VDS = 0V
30 V
25.2 mV/°C
1 µA
±10 µA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250µA
ID = 250µA,
Referenced to 25°C
VGS = 4.5V, ID = 5.0A
VGS = 4.0V, ID = 5.0A
VGS = 3.1V, ID =4.5A
VGS = 2.5V, ID =4.5A
VGS = 4.5V, ID =5.0A,
TJ =150°C
VDS = 5V, ID =5.0A
0.6 0.81 1.5
V
-3.2 mV/°C
23.6
23.9
25.4
27.6
40
41
43
50
m
37.0 61
25.6 S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10V, VGS =0V,
f = 1.0MHz
f = 1.0MHz
600 800
110 150
75 115
3.5
pF
pF
pF
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10V, ID = 1A
VGS = 4.5V, RGEN = 6
VDS = 10V, ID = 5.0A,
VGS = 4.5V
8.3
7.1
18.1
6.0
7.3
0.8
1.9
17
15
37
12
11
2
3
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A
trr
Diode Reverse Recovery Time
IF = 5.0A,
Qrr
Diode Reverse Recovery Charge
di/dt = 100A/µs
2.0
0.69 1.2
17
5
A
V
ns
nC
Notes:
m1.oRuθnJtAinigs
the sum of the junction-to-case
surface of the drain pins.
and
case-to-ambient
thermal
resistance
where
the
case
thermal
reference
is
defined
as
the
solder
a. 145°C/W when mounted on a minimum pad of 2 oz copper
b. 52°C/W when mounted on a 1 in2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
FDMA430NZ Rev B1
2 www.fairchildsemi.com

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDMA430NZSingle N-Channel 2.5V Specified PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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