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FDMA420NZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single N-Channel 2.5V Specified PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA420NZ
समारोह Single N-Channel 2.5V Specified PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA420NZ?> डेटा पत्रक पीडीएफ

FDMA420NZ pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS = 0V , ID = 250µA
ID = 250µA,
Referenced to 25°C
VDS = 16V, VGS = 0V,
VGS = ±12V, VDS = 0V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250µA
ID = 250µA,
Referenced to 25°C
VGS = 4.5V, ID = 5.7A
VGS = 4.0V, ID = 5.7A
VGS = 3.1V, ID = 5.0A
VGS = 2.5V, ID = 5.0A
VGS = 4.5V, ID = 5.7A,
TJ =150°C
VDS = 5V, ID = 5.7A
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 10V, VGS = 0V,
f = 1.0MHz
f = 1.0MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 10V, ID = 1A
VGS = 4.5V, RGEN = 6
VDS = 10V, ID = 5.7A,
VGS = 4.5V
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A
trr
Diode Reverse Recovery Time
IF = 5.7A,
Qrr
Diode Reverse Recovery Charge
di/dt = 100A/µs
Min Typ Max Units
20 V
12 mV/°C
1 µA
±10 µA
0.6 0.83 1.5
V
-3.1 mV/°C
16.8
17.3
18.9
21.2
30
31
33
40
m
24.8 44
28.3 S
701 935
163 220
125 190
1.92
pF
pF
pF
9.8
8.6
21.5
8.6
8.8
0.9
2.4
20
18
43
18
12
2
4
ns
ns
ns
ns
nC
nC
nC
2.0
0.69 1.2
20
5
A
V
ns
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins.
a. 145°C/W when mounted on a minimum pad of 2 oz copper.
b. 52°C/W when mounted on a 1 in2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
FDMA420NZ Rev B1
2 www.fairchildsemi.com

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भाग संख्याविवरणविनिर्माण
FDMA420NZSingle N-Channel 2.5V Specified PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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