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FDH45N50F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 500V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDH45N50F
समारोह 500V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDH45N50F?> डेटा पत्रक पीडीएफ

FDH45N50F pdf
Package Marking and Ordering Information
Part Number
FDH45N50F_F133
Top Mark
FDH45N50F
Package
TO-247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 22.5 A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 22.5 A
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Coss
Output Capacitance
Coss(eff.) Effective Output Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 400 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
--
--
--
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 48 A,
VGS = 10 V, RG = 25 Ω
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 400 V, ID = 48 A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4)
(Note 4)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 45 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 45 A,
dIF/dt =100 A/μs
--
--
--
--
--
Typ.
--
0.5
--
--
--
--
--
0.105
49.0
5100
790
62
161
342
140
500
215
245
105
33
45
--
--
--
188
0.64
Max
--
--
25
250
100
-100
5.0
0.12
--
6630
1030
--
--
--
290
1010
440
500
137
--
--
45
180
1.4
--
--
Unit
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.46 mH, IAS = 48 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 45 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
©2008 Fairchild Semiconductor Corporation
FDH45N50F Rev. C1
2
www.fairchildsemi.com

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