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FDD6637 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 35V P-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6637
समारोह 35V P-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD6637?> डेटा पत्रक पीडीएफ

FDD6637 pdf
Electrical Characteristics
Symbol
Parameter
Drain-Source Avalanche Ratings
EAS Drain-Source Avalanche Energy
(Single Pulse)
IAS Drain-Source Avalanche Current
Off Characteristics(Note 2)
BVDSS
IDSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain–Source
On–Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge, VGS = –10V
Qg Total Gate Charge, VGS = –5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
TA = 25°C unless otherwise noted
Test Conditions
VDD = -35 V, ID= -11 A, L=1mH
VGS = 0 V,
ID = –250 µA
VDS = –28 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
VDS = VGS, ID = –250 µA
VGS = –10 V, ID = –14 A
VGS = –4.5 V, ID = –11 A
VGS = –10 V, ID = –14 A, TJ=125°C
VDS =–5 V, ID = –14 A
VDS = –20 V,
f = 1.0 MHz
V GS = 0 V,
f = 1.0 MHz
VDD = –20 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6
VDS = – 20 V, ID = –14 A
Min Typ Max Units
61 mJ
–14 A
–35 V
–1
±100
µA
nA
–1 –1.6 –3
V
9.7
14.4
14.7
11.6
18
19
m
35 S
2370
470
250
3.6
pF
pF
pF
18 32
ns
10 20
ns
62 100
ns
36 58
ns
45 63
nC
25 35
nC
7 nC
10 nC
FDD6637 Rev. C2(W)
www.fairchildsemi.com

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डाउनलोड[ FDD6637 Datasheet.PDF ]


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