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FDD6635 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 35V N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD6635
समारोह 35V N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD6635?> डेटा पत्रक पीडीएफ

FDD6635 pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics(Note 2)
BVDSS
ΔBVDSS
ΔTJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS Gate–Body Leakage
VGS = 0 V,
ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 28 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
35 V
32 mV/°C
1
±100
μA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
ΔVGS(th)
ΔTJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
ID = 250 μA, Referenced to 25°C
1 1.9
–5
3V
mV/°C
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V,
VDS = 5 V,
ID = 15 A
ID = 13 A
ID = 15 A, TJ=125°C
ID = 15 A
8.2 10
10.2 13
12.4 16
53
mΩ
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 20 V,
f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
1400
317
137
1.4
pF
pF
pF
Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg (TOT)
Total Gate Charge, VGS = 10V
Qg Total Gate Charge, VGS = 5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 20 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 20 V, ID = 15 A
11 20
6 12
28 45
14 25
26 36
13 18
3.9
5.3
ns
ns
ns
ns
nC
nC
nC
nC
FDD6635 Rev. C2(W)
www.fairchildsemi.com

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डाउनलोड[ FDD6635 Datasheet.PDF ]


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