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CEB01N6 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEB01N6
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEB01N6?> डेटा पत्रक पीडीएफ

CEB01N6 pdf
CEP01N6/CEB01N6
CEI01N6/CEF01N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
650
V
1 µA
10 µA
-10 µA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forwand Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.4A
2
4
12 15
V
gFS b
Ciss
Coss
Crss
VDS = 20V, ID = 0.4A
VDS = 25V, VGS = 0V
f = 1.0MHz
0.5 S
136 pF
46 pF
19 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID = 0.4A,
VGS = 10V, RGEN = 4.7
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 0.8A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
19 38 ns
13 26 ns
24 48 ns
35 70 ns
6 8 nC
1.0 nC
4.4 nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 0.8A
0.8 A
1.6 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.L = 190mH, IAS = 0.8A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C .
e.Limited only by maximum temperature allowed .
f .Pulse width limited by safe operating area .
6
2

विन्यास 4 पेज
डाउनलोड[ CEB01N6 Datasheet.PDF ]


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