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FDMA530PZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single P-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA530PZ
समारोह Single P-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA530PZ?> डेटा पत्रक पीडीएफ

FDMA530PZ pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = –250μA, VGS = 0V
ID = –250μA, referenced to 25°C
VDS = –24V, VGS = 0V
VGS = ±25V, VDS = 0V
–30 V
–23 mV/°C
-1 μA
±10 μA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = –250μA
ID = –250μA, referenced to 25°C
VGS = –10V, ID = –6.8A
VGS = –4.5V, ID = –5.0A
VGS = –10V, ID = –6.8A ,TJ = 125°C
VDS = –10V, ID = –6.8A
–1
–2.1
5.4
30
52
43
17
–3 V
mV/°C
35
65 mΩ
63
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = –15V, VGS = 0V,
f = 1MHz
805 1070 pF
155 210 pF
130 195 pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = –15V, ID = –6.8A
VGS = –10V, RGEN = 6Ω
VGS = –10V
VGS = –5V
VDD = –15V
ID = –6.8A
6 12 ns
21 34 ns
43 69 ns
31 50 ns
16 24 nC
9 11 nC
3.1 nC
4.5 nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –2A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = –6.8A, di/dt = 100A/μs
–2
–0.8 –1.2
24 36
19 29
A
V
ns
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
a. 52°C/W when mounted on
a 1 in2 pad of 2 oz copper
b.145°C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied.
FDMA530PZ Rev.B
2
www.fairchildsemi.com

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FDMA530PZSingle P-Channel PowerTrench MOSFETFairchild Semiconductor
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