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FDMA1025P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA1025P
समारोह Dual P-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA1025P?> डेटा पत्रक पीडीएफ

FDMA1025P pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to 25°C
VDS = 16V,
VGS = 0V
TJ = 125°C
VGS = ±12V, VDS = 0V
20 V
14 mV/°C
1
100
±100
µA
nA
On Characteristics
VGS(th)
VGS(th)
TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250µA
0.4 0.9 1.5
V
ID = 250µA, referenced to 25°C
VGS = 4.5V, ID = 3.1A
VGS = 2.5V, ID = 2.3A
VGS = 4.5V, ID = 3.1A,TJ = 125°C
VDS = 5V, ID = 3.1A
3.8 mV/°C
88 155
144 220 m
121 220
6.2 S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 10V, VGS = 0V,
f = 1MHz
340 450 pF
80 105 pF
45 70 pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 10V, ID = 3.1A
VGS = 4.5V, RGEN = 6
VGS = 0V to 4.5V VDD = 10V
ID = 3.1A
5 10 ns
14 26 ns
13 24 ns
8 16 ns
3.4 4.8 nC
0.8 nC
1.0 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 1.1A (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 3.1A, di/dt = 100A/µs
0.8 1.2
V
17 26 ns
10 15 nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a)RθJA =86°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)RθJA =173°C/W when mounted on a minimum pad of 2 oz copper.
a. 86°C/W when mounted on a
1in2 pad of 2 oz copper.
b. 173°C/W when mounted on a
minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
FDMA1025P Rev.B
2
www.fairchildsemi.com

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डाउनलोड[ FDMA1025P Datasheet.PDF ]


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