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FDD6N25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDD6N25
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDD6N25?> डेटा पत्रक पीडीएफ

FDD6N25 pdf
Package Marking and Ordering Information
Device Marking
FDD6N25
FDD6N25
FDU6N25
Device
FDD6N25TM
FDD6N25TF
FDU6N25TU
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Quantity
2500
2000
70
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS = 0V, ID = 250µA
ID = 250µA, Referenced to 25°C
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.2A
250
--
--
--
--
--
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 2.2A
(Note 4) --
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125V, ID = 6A
RG = 25
VDS = 200V, ID = 6A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.4A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 6A
dIF/dt =100A/µs
(Note 4)
--
--
--
--
--
Typ.
--
0.25
--
--
--
--
--
0.9
5.5
194
38
5
10
25
7
12
4.5
1.5
1.8
--
--
--
145
0.55
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
1.1
-- S
250 pF
50 pF
8 pF
30 ns
60 ns
24 ns
34 ns
6 nC
-- nC
-- nC
4.4 A
18 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.7mH, IAS = 4.4A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 4.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD6N25 / FDU6N25 Rev. A
2
www.fairchildsemi.com

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