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STD03N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (STD03N/P) Darlington Transistors - Allegro MicroSystems

भाग संख्या STD03N
समारोह (STD03N/P) Darlington Transistors
मैन्युफैक्चरर्स Allegro MicroSystems 
लोगो Allegro MicroSystems लोगो 
पूर्व दर्शन
1 Page
		
<?=STD03N?> डेटा पत्रक पीडीएफ

STD03N pdf
STD03N and
STD03P
Darlington Transistors for Audio Amplifiers
SELECTION GUIDE
Part Number
STD03N*
STD03P*
Type
NPN
PNP
hFE Rating
Range O: 5000 to 12000
Range Y: 8000 to 20000
Range O: 5000 to 12000
Range Y: 8000 to 20000
Packing
Bulk, 100 pieces
*Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y,
depending upon availability.
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Characteristic
Symbol
Rating
Collector-Base Voltage1
VCBO
160
Collector-Emitter Voltage1
VCEO
160
Emitter-Base Voltage1
VEBO
5
Collector Current1
IC 15
Base Current1
IB 1
Collector Power Dissipation2
PC 160
Diode Forward Current
IF 10
Junction Temperature
TJ 150
Storage Temperature
Tstg –55 to150
1For PNP type (STD03P), voltage and current values are negative.
2TC = 25°C.
Unit
V
V
V
A
A
W
mA
°C
°C
ELECTRICAL CHARACTERISTICS at TA = 25°C
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max. Unit
Collector-Cutoff Current1
ICBO
VCB = 160 V
– – 100 μA
Emitter Cutoff Current1
IEBO
VEB = 5 V
– – 100 μA
Collector-Emitter Voltage1
VCEO IC = 30 mA
160 –
–V
DC Current Transfer Ratio2,3
hFE VCE = 4 V, IC = 10 A
5000
20000
Collector-Emitter Saturation Voltage
VCE(sat) IC = 10 A, IB = 10 mA
– – –2.0 V
Base-Emitter Saturation Voltage
VBE(sat) IC = 10 A, IB = 10 mA
– – –2.5 V
Base-Emitter Voltage
VBE
STD03N
STD03P
VCE = 20 V, IC = 40 mA
VCE = –20 V, IC = –40 mA
– 1190 – mV
– 1200 – mV
Diode Forward Voltage
VF
STD03N
STD03P
IF = 2.5 mA
IF = 2.5 mA
– 705 – mV
– 1540 – mV
1For PNP type (STD03P), voltage and current values are negative.
2hFE rating: 5000 to 12000(O brand on package), 8000 to 20000 (Y).
3When the transistor is used in pairs, the following conditions must be satised: Total VF Total VBE of the transistors (the above measurement
conditions shall be applied), and ΔV = 0 to 500 mV.
All performance characteristics given are typical values for circuit or
system baseline design only and are at the nominal operating voltage and
an ambient temperature of +25°C, unless otherwise stated.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
2

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डाउनलोड[ STD03N Datasheet.PDF ]


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