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T2500D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Bidirectional Thyristors - ON Semiconductor

भाग संख्या T2500D
समारोह Silicon Bidirectional Thyristors
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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<?=T2500D?> डेटा पत्रक पीडीएफ

T2500D pdf
T2500D
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C
(Rated VDRM, VRRM; Gate Open) TJ = 100°C
ON CHARACTERISTICS
IDRM, − −
IRRM
Peak On-State Voltage (Note 2)
(ITM = "30 A Peak)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VTM − −
IGT
− 10
− 20
− 15
− 30
Gate Trigger Voltage (Continuous dc) (All Four Quadrants)
(VD = 12 Vdc, RL = 100 W)
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W, TC = 100°C)
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA)
VGT
VGD
IH
− 1.25
0.2 −
− 15
Gate Controlled Turn-On Time
(Rated VDRM, IT = 10 A , IGT = 160 mA, Rise Time = 0.1 ms)
DYNAMIC CHARACTERISTICS
tgt − 1.6
Critical Rate-of-Rise of Commutation Voltage
(Rated VDRM, IT(RMS) = 6 A, Commutating di/dt = 3.2 A/ms, Gate Unenergized,
TC = 80°C)
Critical Rate-of-Rise of Off-State Voltage
(Rated VDRM, Exponential Voltage Rise, Gate Open, TC = 100°C)
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt(c)
dv/dt
10
75
Max
10
2.0
2.0
25
60
25
60
2.5
30
Unit
mA
mA
V
mA
V
V
mA
ms
V/ms
V/ms
http://onsemi.com
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