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T2322B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Sensitive Gate Triacs Silicon Bidirectional Thyristors - ON Semiconductor

भाग संख्या T2322B
समारोह Sensitive Gate Triacs Silicon Bidirectional Thyristors
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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T2322B pdf
T2322B
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Sec
Symbol
RqJC
RqJA
TL
Max
3.5
60
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
−−
− 0.2
Peak On-State Voltage (Note 3)
(ITM = "10 A)
VTM − 1.7
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 W)
All Quadrants
IGT − −
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 W, TC = 25°C)
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 W, TC = 110°C)
VGT
VGD
− 1.0
0.15 −
Holding Current
(VD = 12 V, IT (Initiating Current) = "200 mA, Gate Open)
IH − 15
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA, tr = 0.1 msec)
DYNAMIC CHARACTERISTICS
tgt − 1.8
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100°C)
dv/dt
10 100
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C)
3. Pulse Test: Pulse Width 1.0 ms, Duty Cycle 2%.
dv/dt(c)
1.0 4.0
Unit
°C/W
°C/W
°C
Max Unit
10 mA
0.75 mA
2.2 V
10 mA
2.2 V
−V
30 mA
2.5 ms
− V/ms
− V/ms
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