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T2096 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH VOLTAGE TRANSISTOR - UTC

भाग संख्या T2096
समारोह HIGH VOLTAGE TRANSISTOR
मैन्युफैक्चरर्स UTC 
लोगो UTC लोगो 
पूर्व दर्शन
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<?=T2096?> डेटा पत्रक पीडीएफ

T2096 pdf
T2096
NPN SILICON TRANSISTOR
„ ABSOLUATE MAXIUM RATINGS (Ta = 25)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
VCES
800
800
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
400
8
V
V
Base Current
DC Collector Current
IB 1 A
IC 2 A
Pulse Collector Current (Note 2)
Collector Dissipation
Ta=25
Tc=25
ICP
PC
4A
1
15
W
Junction Temperature
TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width 300μS, Duty Cycle10%
„ ELECTRICAL CHARACTERISTICS (Ta= 25, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE 1
hFE 2
fT
Cob
tON
tSTG
tF
TEST CONDITIONS
IC =1mA, IE =0
IC =5mA, RBE=
IE =1mA, IC =0
IC =1A, IB =0.2A
IC =1A, IB =0.2A
VCB =400V, IE =0
VEB =5V, IC =0
VCE =5V, IC =1mA
VCE =5V, IC =0.2A
VCE =10V, IC =0.2A
VCB =10V, f =1MHz
IC =1.0A, IB1 =0.05A
IB2 = -0.5A, RL =200
VCC=200V
MIN TYP MAX UNIT
800 V
400 V
8V
0.8 V
1.5 V
10 μA
10 μA
45
120 180
20 MHz
20 pF
0.5 μs
2.5 μs
0.3 μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R213-017,A

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