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FDMA1032CZ डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Complementary PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMA1032CZ
समारोह Complementary PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDMA1032CZ?> डेटा पत्रक पीडीएफ

FDMA1032CZ pdf
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 16 V,
VGS = 0 V
VDS = –16 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
Q1 20
Q2 –20
V
Q1 15 mV/°C
Q2 –12
Q1 1 µA
Q2 –1
All ±10 µA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
VDS = VGS,
VDS = VGS,
ID = 250 µA
ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 3.7 A
VGS = 2.5 V, ID = 3.3 A
VGS = 4.5 V, ID = 3.7 A, TJ = 125°C
VGS = –4.5V, ID = –3.1 A
VGS = –2.5 V, ID = –2.5 A
VGS = –4.5 V, ID = –3.1 A,TJ = 125°C
VDS = 10 V,
ID = 3.7 A
VDS = –10 V,
ID = –3.1 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
VDS = 10 V, VGS = 0 V, f = 1.0 MHz
Q2
VDS = –10 V, VGS = 0 V, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
0.6
–0.6
1.0
–1.0
–4
4
1.5 V
–1.5
mV/°C
37 68 m
50 86
53 90
60 95
88 141
87 140
16
–11
m
S
340 pF
540
80 pF
120
60 pF
100
FDMA1032CZ Rev B (W)

विन्यास 9 पेज
डाउनलोड[ FDMA1032CZ Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDMA1032CZComplementary PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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