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FDP65N06 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDP65N06
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP65N06?> डेटा पत्रक पीडीएफ

FDP65N06 pdf
Package Marking and Ordering Information
Device Marking
FDP65N06
Device
FDP65N06
Package
TO-220
Reel Size
--
Tape Width
--
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 125°C
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 32.5 A
VDS = 40 V, ID = 32.5 A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 30 V, ID = 65A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 48 V, ID = 65A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 65 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 65 A,
dIF / dt = 100 A/µs
(Note 4)
60
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 47µH, IAS =65A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 65A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.5
--
--
--
--
--
0.013
39
1670
464
35
24
94
98
52
33
10
11
--
--
--
62
132
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
0.016
--
V
S
2170
600
52
pF
pF
pF
58 ns
200 ns
210 ns
114 ns
43 nC
-- nC
-- nC
65 A
260 A
1.4 V
-- ns
-- nC
FDP65N06 Rev. A1
2 www.fairchildsemi.com

विन्यास 8 पेज
डाउनलोड[ FDP65N06 Datasheet.PDF ]


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