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K3314 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2SK3314 - Toshiba Semiconductor

भाग संख्या K3314
समारोह 2SK3314
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=K3314?> डेटा पत्रक पीडीएफ

K3314 pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±100 µA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7 A
VDS = 10 V, ID = 7 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (Gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 15 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V
dIDR / dt = 100 A / µs
Marking
2SK3314
Min Typ. Max Unit
— — ±10
±30 —
— — 100
500 —
2.0 — 4.0
— 0.35 0.49
5.0 9.9 —
— 2600 —
— 280 —
— 880 —
µA
V
µA
V
V
S
pF
— 50 —
— 85 —
ns
— 65 —
— 260 —
— 58 —
— 36 —
— 22 —
nC
Min Typ. Max Unit
— — 15 A
— — 60 A
1.7
V
— 105 180 ns
— 0.24 —
µC
2 2002-01-25

विन्यास 6 पेज
डाउनलोड[ K3314 Datasheet.PDF ]


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