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FDP33N25 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDP33N25
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDP33N25?> डेटा पत्रक पीडीएफ

FDP33N25 pdf
Package Marking and Ordering Information
Device Marking
FDP33N25
Device
FDP33N25
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250μA
ID = 250μA, Referenced to 25°C
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
250
--
--
--
--
--
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250μA
VGS = 10V, ID = 16.5A
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID =16.5A
(Note 4)
--
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125V, ID = 33A
RG = 25Ω
VDS = 200V, ID = 33A
VGS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 33A
dIF/dt =100A/μs
(Note 4)
--
--
--
--
--
Typ.
--
0.25
--
--
--
--
--
0.077
26.6
1640
330
39
35
230
75
120
36.8
10
17
--
--
--
220
1.71
Max Units
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
5.0
0.094
--
V
Ω
S
2135
430
59
pF
pF
pF
80 ns
470 ns
160 ns
250 ns
48 nC
-- nC
-- nC
33 A
132 A
1.4 V
-- ns
-- μC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 33A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP33N25 Rev A
2 www.fairchildsemi.com

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