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FDD8451 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDD8451
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FDD8451?> डेटा पत्रक पीडीएफ

FDD8451 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to
25°C
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transcondductance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
VGS = 10V, ID = 9A
TJ = 150°C
VDS = 5V, ID = 9A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller”Charge
VDD = 20V, ID = 1A
VGS = 10V, RGS = 6
VDS= 20V, ID = 9A
VGS = 10V
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25oC, L = 0.1mH, IAS = 20A ,VDD = 36V, VGS = 10V.
VGS = 0V, IS = 9A
IF = 9A, di/dt = 100A/µs
IF = 9A, di/dt = 100A/µs
Min Typ Max Units
40 V
33.5 mV/°C
1
±100
µA
nA
1 1.7 3
V
-5.7 mV/°C
19 24
23 30 m
32 41
29 S
742 990
112 150
72 110
1.1
pF
pF
pF
7 14 ns
2 10 ns
19 34 ns
5 10 ns
14 20 nC
7.7 11 nC
2.3 nC
3.2 nC
0.87 1.2
25 38
19 29
V
ns
nC
FDD8451 Rev. B
2 www.fairchildsemi.com

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