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TC1411 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH-SPEED MOSFET DRIVERS - TelCom Semiconductor

भाग संख्या TC1411
समारोह HIGH-SPEED MOSFET DRIVERS
मैन्युफैक्चरर्स TelCom Semiconductor 
लोगो TelCom Semiconductor लोगो 
पूर्व दर्शन
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<?=TC1411?> डेटा पत्रक पीडीएफ

TC1411 pdf
1A HIGH-SPEED MOSFET DRIVERS
TC1411
TC1411N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
Power Dissipation (TA 70°C)
Plastic ............................................................. 730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V VDD 16V, unless other-
wise specified.
Symbol
Parameter
Test Conditions
Min
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
IPK Peak Output Current
IREV Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR Rise Time
tF Fall Time
tD1 Delay Time
tD2 Delay Time
Power Supply
IS Power Supply Current
NOTE: 1. Switching times are guaranteed by design.
–5V VIN VDD
DC Test
DC Test
VDD = 16V, IO = 10mA
VDD = 16V
Duty Cycle 2%
t 300 µsec
Figure 1
Figure 1
Figure 1
Figure 1
VIN = 3V
VIN = 0V
TA = 25°C
– 40°C TA 85°C
2.0
–1
– 10
VDD – 0.025
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
0.5
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
Typ
8
10
10
1.0
25
27
29
25
27
29
30
33
35
30
33
35
0.5
0.1
Max
0.8
1
10
0.025
11
14
14
35
40
40
35
40
40
40
45
45
40
45
45
1.0
0.15
Unit
V
V
µA
V
V
A
A
nsec
nsec
nsec
nsec
mA
4-190
TELCOM SEMICONDUCTOR, INC.

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