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TC1410 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH-SPEED MOSFET DRIVERS - TelCom Semiconductor

भाग संख्या TC1410
समारोह HIGH-SPEED MOSFET DRIVERS
मैन्युफैक्चरर्स TelCom Semiconductor 
लोगो TelCom Semiconductor लोगो 
पूर्व दर्शन
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<?=TC1410?> डेटा पत्रक पीडीएफ

TC1410 pdf
0.5A HIGH-SPEED MOSFET DRIVERS
TC1410
TC1410N
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP RθJ-A ................................................ 150°C/W
CerDIP RθJ-C .................................................. 50°C/W
PDIP RθJ-A ................................................... 125°C/W
PDIP RθJ-C ..................................................... 42°C/W
SOIC RθJ-A ................................................... 155°C/W
SOIC RθJ-C ..................................................... 45°C/W
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
Power Dissipation (TA 70°C)
Plastic DIP ...................................................... 730mW
CerDIP ............................................................800mW
SOIC ............................................................... 470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V VDD 16V, unless other-
wise specified. Typical values are measured at TA=25°C; VDD =16V.
Symbol Parameter
Test Conditions
Min Typ Max Unit
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
– 5V VIN VDD
– 40°C TA 85°C
High Output Voltage
Low Output Voltage
Output Resistance
DC Test
DC Test
VDD = 16V, IO = 10mA
IPK Peak Output Current
IREV Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
tR Rise Time
VDD = 16V
Duty Cycle 2%
t 300 µsec
Figure 1
tF Fall Time
Figure 1
tD1 Delay Time
Figure 1
tD2 Delay Time
Figure 1
Power Supply
IS
Power Supply Current
VIN = 3V
VIN = 0V
NOTE: 1. Switching times are guaranteed by design.
TA = 25°C
VDD – 0.025
TA=25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
TA = 25°C
0°C TA 70°C
– 40°C TA 85°C
VDD = 16V
2.0
–1
– 10
0.5
——V
— 0.8 V
— 1 µA
— 10
—V
— 0.025
16 22
20 28
20 28
0.5 —
——
V
A
A
25 35 nsec
27 40
29 40
25 35 nsec
27 40
29 40
30 40 nsec
33 45
35 45
30 40 nsec
33 45
35 45
0.5 1.0 mA
0.1 0.15
4-184
TELCOM SEMICONDUCTOR, INC.

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