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FDP15N65 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FDP15N65
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDP15N65?> डेटा पत्रक पीडीएफ

FDP15N65 pdf
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Package Marking and Ordering Information
Device Marking
FDP15N65
FDPF15N65
Device
FDP15N65
FDPF15N65
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0V, ID = 250µA, TJ = 25°C
ID = 250µA, Referenced to 25°C
VDS = 650V, VGS = 0V
VDS = 520V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 7.5A
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40V, ID = 7.5A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS = 0V,
f = 1.0MHz
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 325V, ID = 15A
RG = 21.7
VDS = 520V, ID = 15A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 15A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 15A
dIF/dt =100A/µs
(Note 4)
Min
650
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.65
--
--
--
--
--
0.36
19.2
2380
295
23.6
65
125
105
65
48.5
14.0
21.2
--
--
--
496
5.69
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
0.44
-- S
3095
385
35.5
pF
pF
pF
140
260
220
140
63.0
--
--
ns
ns
ns
ns
nC
nC
nC
15 A
60 A
1.4 V
-- ns
-- µC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 15A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP15N65 / FDPF15N65 Rev. A
2
www.fairchildsemi.com

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