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GPS40B120UD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IRGPS40B120UD - International Rectifier

भाग संख्या GPS40B120UD
समारोह IRGPS40B120UD
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=GPS40B120UD?> डेटा पत्रक पीडीएफ

GPS40B120UD pdf
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IRGPS40B120UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
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––– 0.40 ––– V/°C
––– 3.12 3.40
––– 3.39 3.70 V
––– 3.88 4.30
VGE = 0V, IC = 1.0mA, (25°C-125°C)
IC = 40A
VGE = 15V
IC = 50A
IC = 40A, TJ = 125°C
5, 6
7, 9
10
VGE(th)
VGE(th)/TJ
gfe
–––
Gate Threshold Voltage
4.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
4.24
5.0
-12
30.5
4.70
6.0
––– mV/°C
––– S
IC = 50A, TJ = 125°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 1.0mA, (25°C-125°C)
VCE = 50V, IC = 40A, PW=80µs
11
9,10
11 ,12
ICES
Zero Gate Voltage Collector Current
––– ––– 500 µA VGE = 0V, VCE = 1200V
––– 420 1200
VGE = 0V, VCE = 1200V, TJ = 125°C
VFM Diode Forward Voltage Drop
––– 2.03 2.40
IC = 40A
––– 2.17 2.60 V IC = 50A
8
––– 2.26 2.68
––– 2.46 2.95
IC = 40A, TJ = 125°C
IC = 50A, TJ = 125°C
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IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
DataSMhine.etT4yUp..coMmax. Units
Conditions
Qg Total Gate Charge (turn-on)
––– 340 510
IC = 40A
Ref.Fig.
23
Qge Gate - Emitter Charge (turn-on)
––– 40 60 nC VCC = 600V
CT1
Qgc
Gate - Collector Charge (turn-on)
––– 165 248
VGE = 15V
Eon Turn-On Switching Loss
––– 1400 1750 µJ IC = 40A, VCC = 600V
CT4
Eoff Turn-Off Switching Loss
––– 1650 2050
VGE = 15V,RG = 4.7Ω, L =200µH
WF1
Etot Total Switching Loss
––– 3050 3800
Ls = 150nH
TJ = 25°C
WF2
Eon Turn-On Switching Loss
––– 1950 2300
TJ = 125°C
13,15
Eoff
Etot
td(on)
tr
td(off)
tf
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 2200 2950 µJ Energy losses include "tail" and
––– 4150 5250
diode reverse recovery.
––– 76 99
––– 39 55
IC = 40A, VCC = 600V
VGE = 15V, RG = 4.7L =200µH
––– 332 365 ns Ls = 150nH, TJ = 125°C
––– 25 33
14, 16
CT4
WF1
WF2
Cies
Coes
Input Capacitance
Output Capacitance
––– 4300 –––
––– 330 –––
VGE = 0V
pF VCC = 30V
22
Cres
RBSOA
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
––– 160 –––
FULL SQUARE
f = 1.0MHz
TJ = 150°C, IC = 160A, Vp =1200V
VCC = 1000V, VGE = +15V to 0V
RG = 4.7
4
CT2
SCSOA
Erec
trr
Irr
Short Circuit Safe Operting Area
10 ––– –––
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
––– 3346 –––
––– 180 –––
––– 50 –––
TJ = 150°C, Vp =1200V
µs VCC = 900V, VGE = +15V to 0V,
RG = 4.7
µJ TJ = 125°C
ns VCC = 600V, IF = 60A, L =200µH
A VGE = 15V,RG = 4.7Ω, Ls = 150nH
CT3
WF4
17,18,19
20, 21
CT4,WF3
2 www.irf.com
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डाउनलोड[ GPS40B120UD Datasheet.PDF ]


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International Rectifier


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