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GT20J321 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - High Power Switching Applications Fast Switching Applications - Toshiba Semiconductor

भाग संख्या GT20J321
समारोह High Power Switching Applications Fast Switching Applications
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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<?=GT20J321?> डेटा पत्रक पीडीएफ

GT20J321 pdf
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GT20J321
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Turn-on time
Switching time
Turn-off delay time
Fall time
Turn-off time
Switching loss
Turn-on switching
loss
Turn-off switching
loss
Peak forward voltage
Reverse recovery time
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
td (on)
tr
ton
td (off)
tf
toff
Eon
VGE = ±20 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 2 mA, VCE = 5 V
IC = 20 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
Inductive Load
VCC = 300 V, IC = 20 A
VGG = +15 V, RG = 33
(Note 1)
(Note 2)
3.5
Eoff
VF IF = 20 A, VGE = 0
trr IF = 20 A, di/dt = 100 A/µs
Note 1: Switching time measurement circuit and input/output waveforms
Typ. Max
2.0
3000
0.06
±500
1.0
6.5
2.45
0.04
0.17
0.24
0.04
0.34
0.40
0.43
100
2.1
Unit
nA
mA
V
V
pF
µs
mJ
V
ns
VGE
IC
RG
L VCC
VCE
VGE
0
90%
IC
90%
0
VCE
10%
td (off)
10%
tf
toff
10%
90%
10%
td (on)
tr
ton
10%
Note 2: Switching loss measurement waveforms
VGE
0
90%
10%
IC
0 VCE
Eoff
5%
Eon
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GT20J321High Power Switching Applications Fast Switching ApplicationsToshiba Semiconductor
Toshiba Semiconductor


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