www.DataSheet4U.com
SUP/SUB75N05-06A
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 50 V, VGS = 0 V
VDS = 50 V, VGS = 0 V, TJ = 125_C
VDS = 50 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 75 A
VGS = 10 V, ID = 75 A, TJ = 125_C
VGS = 10 V, ID = 75 A, TJ = 175_C
VDS = 15 V, ID = 60 A
50
2.0
120
0.005
30
Input Capacitance
Ciss
4500
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1100
Reverse Transfer Capacitance
Crss
360
Total Gate Chargec
Qg
85
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
www.DataSheet4U.comQgs VDS = 25 V, VGS = 10 V, ID = 75A
Qgd
25
25
Rg f = 1.0 MHz
3
Turn-On Delay Timec
td(on)
20
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 25 V, RL = 0.33 W
ID ^ 75 A, VGEN = 10 V, Rg = 2.5 W
20
50
Fall Timec
tf
20
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 75 A , VGS = 0 V
IF = 75 A, di/dt = 100 A/ms
1.0
65
5
0.16
Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Max Unit
4.0
"100
1
50
150
0.006
0.010
0.012
V
nA
mA
A
W
S
pF
120
nC
W
40
100
100 ns
40
75
200
1.4
120
8
0.48
A
V
ns
A
mC
www.vishay.com
2
Document Number: 72633
S-32561—Rev. A, 15-Dec-03
www.DataSheet4U.com
