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SUB75N06-08 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Vishay Siliconix

भाग संख्या SUB75N06-08
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=SUB75N06-08?> डेटा पत्रक पीडीएफ

SUB75N06-08 pdf
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SUP/SUB75N06-08
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min Typ Max
Static
DrainĆSource Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
Drain-Source On-State Resistanceb
rDS(on)
Forward Transconductanceb
Dynamica
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 10 V, ID = 30 A, TJ = 125_C
VGS = 10 V, ID = 30 A, TJ = 175_C
VDS = 15 V, ID = 30 A
60
2.0 3.0 4.0
"100
1
50
150
120
0.007 0.008
0.012
0.016
30
Input Capacitance
Ciss
4800
Output Capacitance
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz
910
Reverse Transfer Capacitance
Crss
270
Total Gate Chargec
www.DataSheet4U.comGate-Source Chargec
Qg
Qgs VDS = 30 V, VGS = 10 V, ID = 75 A
85 120
28
Gate-Drain Chargec
Qgd
26
Turn-On Delay Timec
td(on)
20 40
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 0.47 W
ID ^ 75 A, VGEN = 10 V, RG = 2.5 W
95 200
65 120
Fall Timec
tf
20 60
SourceĆDrain Diode Ratings and Characteristics (TC = 25_C)a
Continuous Current
Pulsed Current
Forward Voltageb
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IS
ISM
VSD
trr
IRM(REC)
Qrr
IF = 75 A , VGS = 0 V
IF = 75 A, di/dt = 100 A/ms
75
240
1.0 1.3
67 120
68
0.2 0.48
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test: pulse width v 300 msec, duty cycle v 2%.
c. Independent of operating temperature.
Unit
V
nA
mA
A
W
S
pF
nC
ns
A
V
ns
A
mC
2 Siliconix
S-47969—Rev. D, 08-Jul-96
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