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SUB70N03-09P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Vishay Siliconix

भाग संख्या SUB70N03-09P
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
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SUB70N03-09P pdf
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SPICE Device Model SUP/ SUB70N03-09P
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Typical
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 µA
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 20 A
VGS = 10 V, ID = 30 A, 125°C
VGS = 10 V, ID = 30 A, 175°C
VDS = 15 V, ID = 30 A
IF = 70 A, VGS = 0 V
1.67
621
0.007
0.011
0.0108
0.0127
51
0.92
Input Capacitance
Ciss
2681
Output Capacitance
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz
664
Reverse Transfer Capacitance
Crss
310
Total Gate Chargec
Gate-Source Chargec
Qg
Qgs VDS = 15 V, VGS = 10 V, ID = 70 A
46
8.5
Gate-Drain Chargec
Qgd
11
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(on)
13
tr VDD = 15 V, RL = 0.21
11
www.DataSheet4U.comtd(off)
tf
ID 70 A, VGEN = 10 V, RG = 2.5
35
12
Source-Drain Reverse Recovery Time trr IF = A, di/dt = 100 A/µs
35
Notes
a. Pulse test; pulse width 300 µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature
Unit
V
A
S
V
pf
nC
ns
www.vishay.com
2
Document Number: 71566
05-Nov-98
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