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SUB85N02-03 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Vishay Siliconix

भाग संख्या SUB85N02-03
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=SUB85N02-03?> डेटा पत्रक पीडीएफ

SUB85N02-03 pdf
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SUP/SUB85N02-03
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 2 mA
VDS = VGS, IDS = 2 mA
VDS = 0 V, VGS = "8 V
VDS = 16 V, VGS = 0 V
VDS = 16 V, VGS = 0 V, TJ = 125_C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 30 A
VGS = 4.5 V, ID = 30 A, TJ = 125_C
VGS = 4.5 V, ID = 30 A, TJ = 175_C
VGS = 2.5 V, ID = 30 A
VGS = 1.8 V, ID = 30 A
VDS = 5 V, ID = 30 A
20
V
0.45
"100
nA
1
mA
250
120 A
0.0025 0.003
0.0042
0.0027
0.005
0.0034
W
0.003 0.0038
30 S
Input Capacitance
Ciss
21250
Output Capacitance
Coss
VGS = 0 V, VDS = 20 V, f = 1 MHz
www.DataSheet4U.comReversen Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 10 V, VGS = 4.5 V, ID = 85 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 10 V, RL = 0.12 W
ID ] 85 A, VGEN = 4.5 V, RG = 2.5 W
Fall Timec
tf
2350
1520
140
18
24
20
200
450
320
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Pulsed Current
Forward Voltagea
Reverse Recovery Time
ISM
VSD IF = 100 A, VGS = 0 V
trr IF = 50 A, di/dt = 100 A/ms
1.2
75
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
200
30
300
670
480
240
1.5
150
pF
nC
ns
A
V
ns
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2
Document Number: 71421
S-03181Rev. A, 05-Mar-01
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