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SUB40N06-25L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - Vishay Siliconix

भाग संख्या SUB40N06-25L
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स Vishay Siliconix 
लोगो Vishay Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=SUB40N06-25L?> डेटा पत्रक पीडीएफ

SUB40N06-25L pdf
SUP/SUB40N06-25L
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125_C
VGS = 10 V, ID = 20 A, TJ = 175_C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 40 A
VDD = 30 V, RL = 0.8 W
ID ] 40 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 40 A, VGS = 0 V
IF = 40 A, di/dt = 100 A/ms
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Min Typ Max Unit
60
V
1.0 2.0 3.0
"100
nA
1
50 mA
150
40 A
0.022
0.043
0.053
W
0.025
S
1800
350
100
40
9
10
10
9
28
7
60
20
20
50
15
pF
nC
ns
40
A
100
1.0 1.5 V
48 100 ns
6A
0.15
mC
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70288
S-57253—Rev. C, 24-Feb-98

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