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डेटा पत्रक - (TC1426 - TC1428) 1.2A DUAL HIGH-SPEED MOSFET DRIVERS - TelCom Semiconductor

भाग संख्या TC1427
समारोह (TC1426 - TC1428) 1.2A DUAL HIGH-SPEED MOSFET DRIVERS
मैन्युफैक्चरर्स TelCom Semiconductor 
लोगो TelCom Semiconductor लोगो 
पूर्व दर्शन
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<?=TC1427?> डेटा पत्रक पीडीएफ

TC1427 pdf
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TC1426
TC1427
TC1428
1.2A DUAL HIGH-SPEED MOSFET DRIVERS
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation (TA 70°C)
Plastic DIP ...........................................................730W
SOIC ................................................................ 470 mW
Derating Factor
Plastic DIP ..................................................... 8 mW/°C
SOIC .............................................................. 4 mW/°C
Supply Voltage ............................................................18V
Input Voltage, Any Terminal .. (VDD + 0.3V) to (GND – 0.3V)
Operating Temperature : C Version .............. 0°C to +70°C
E Version ......... – 40°C to +85°C
Maximum Chip Temperature ................................. +150°C
Storage Temperature ............................. +65°C to +150°C
Lead Temperature (Soldering ,10 sec) ................. +300°C
*Stresses above those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: TA = 25°C with 4.5V VDD+ 16V unless otherwise specified.
Symbol
Input
VIH
VIL
IIN
Output
VOH
VOL
RO
Parameter
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
IPK Peak Output Current
I Latch-Up Current
Switching Time (Note 1)
tR Rise Time
tF Fall Time
tD1 Delay Time
tD2 Delay Time
Power Supply
IS Power Supply Current
Note: 1. Switching times guaranteed by design.
Test Conditions
Min Typ Max
Logic 1, Input Voltage
Logic 0, Input Voltage
0V VIN VDD
3—
——
–1 —
Test Figures 1 and 2
Test Figures 1 and 2
VIN = 0.8V,
IOUT = 10 mA, VDD = 16V
VIN = 3V,
IOUT = 10 mA, VDD = 16V
Withstand Reverse Current
VDD – 0.025
> 500
12
8
1.2
0.8
1
0.025
18
12
Test Figures 1 and 2
Test Figures 1 and 2
Test Figures 1 and 2
Test Figures 1 and 2
— — 35
— — 25
— — 75
— — 75
VIN = 3V (Both Inputs)
VIN = 0V (Both Inputs)
— —9
— — 0.5
Unit
V
V
µA
V
V
A
mA
nsec
nsec
nsec
nsec
mA
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4-208
TELCOM SEMICONDUCTOR, INC.

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