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STE180NE10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFET - ST Microelectronics

भाग संख्या STE180NE10
समारोह N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=STE180NE10?> डेटा पत्रक पीडीएफ

STE180NE10 pdf
STE180NE10
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max 0.347
°C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 25 V)
Max Value
60
720
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source Breakdown
Voltage
ID = 1 mA
VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
Max.
4
40
±400
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 1 mA
VGS = 10 V
ID = 90 A
Min.
2
Typ.
3
4.5
Max.
4
6
Unit
V
m
DYNAMIC
Symbol
gfs
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS>ID(on)xRDS(on)max ID=80 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
30
Typ.
21
2.5
0.9
Max.
Unit
S
nF
nF
nF
2/8

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भाग संख्याविवरणविनिर्माण
STE180NE10N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET POWER MOSFETST Microelectronics
ST Microelectronics


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