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STE180N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET - ST Microelectronics

भाग संख्या STE180N10
समारोह N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=STE180N10?> डेटा पत्रक पीडीएफ

STE180N10 pdf
STE180N10
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With conductive
Grease Applied
Max
Max
0.27
0.05
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
60
720
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA VGS = 0
IDSS
IGSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Tc = 125 oC
Min.
100
Typ.
Max.
Unit
V
50
500
± 400
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 90 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2
Typ.
3
5.5
Max.
4
7
Unit
V
m
180 A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 90 A
Min.
70
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
18 nF
4 nF
0.5 nF
2/8

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भाग संख्याविवरणविनिर्माण
STE180N10N - CHANNEL 100V - 5.5 mohm - 180A - ISOTOP POWER MOSFETST Microelectronics
ST Microelectronics


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