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STE110NS20FD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - ST Microelectronics

भाग संख्या STE110NS20FD
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STE110NS20FD?> डेटा पत्रक पीडीएफ

STE110NS20FD pdf
STE110NS20FD
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
0.25
30
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
110
750
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
200
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
Min.
3
Typ.
4
0.022
Max.
5
0.024
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Ciss
Coss
Crss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS > ID(on) x RDS(on)max,
ID = 50A
VDS = 25V, f = 1 MHz, VGS = 0
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
30
7900
1500
460
Max.
Unit
S
pF
pF
pF
2/8

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डाउनलोड[ STE110NS20FD Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STE110NS20FDN-Channel Power MOSFETST Microelectronics
ST Microelectronics


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