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STE100N20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE Power MOS Transistor - ST Microelectronics

भाग संख्या STE100N20
समारोह N-CHANNEL ENHANCEMENT MODE Power MOS Transistor
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=STE100N20?> डेटा पत्रक पीडीएफ

STE100N20 pdf
STE100N20
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthc-h Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
oC/ W
oC/ W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA VGS = 0 V
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
IG SS
Gate-body Leakage
Current (VD S = 0)
VGS = ± 20 V
Min.
200
Typ.
Max.
Unit
V
400
2
± 400
µA
mA
nA
ON ()
Symb ol
VG S(th)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 1 mA
Static Drain-source On VGS = 10V ID = 60 A
R esist anc e
Min.
2
Typ.
Max.
4
0. 021
Unit
V
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V ID = 60 A
Min.
38
Typ.
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0 V
12
3200
1200
nF
pF
pF
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Test Conditions
VDD = 100 V ID = 50 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 1)
VDD = 160 V ID = 100 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 160 V
VGS = 10 V
ID = 100 A
Min.
Typ.
75
140
Max.
Unit
ns
ns
480 A/µs
505 nC
2/8

विन्यास 8 पेज
डाउनलोड[ STE100N20 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
STE100N20N-CHANNEL ENHANCEMENT MODE Power MOS TransistorST Microelectronics
ST Microelectronics


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