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STE40NA60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR - ST Microelectronics

भाग संख्या STE40NA60
समारोह N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=STE40NA60?> डेटा पत्रक पीडीएफ

STE40NA60 pdf
STE40NA60
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
20
3000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 500 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS =0.8x Max Rating Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
900
Typ. Max.
250
1000
± 200
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 1mA
Static Drain-source On VGS = 10V ID = 20 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
2.25
Typ.
3
Max.
3.75
Unit
V
0.12 0.135
40 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 20 A
VDS = 25 V f = 1.0 MHz VGS = 0
Min.
20
Typ.
Max.
Unit
S
13000 16000
1500 1700
350 450
pF
pF
pF
2/5

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डाउनलोड[ STE40NA60 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
STE40NA60N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORST Microelectronics
ST Microelectronics


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