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STE48NM50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL Power MOSFET - ST Microelectronics

भाग संख्या STE48NM50
समारोह N-CHANNEL Power MOSFET
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=STE48NM50?> डेटा पत्रक पीडीएफ

STE48NM50 pdf
STE48NM50
Table 3: Absolute Maximum ratings
Symbol
Parameter
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( )
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (*) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (AC-RMS)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
( )Pulse width limited by safe operating area
(*) ISD 48A, di/dt 400 A/µs, VDD V(BR)DSS, Tj TJMAX.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Rthc-sink (**) Thermal Resistance Case-sink
(**) with conductive GREASE Applies
Max
Typ
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
±30
48
30
192
450
3.6
15
2500
–65 to 150
150
Unit
V
A
A
A
W
W/°C
V/ns
V
°C
°C
0.28
0.05
Max Value
15
810
°C/W
°C/W
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS= Max Rating, TC= 125°C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
345
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 24A
0.08 0.1
Unit
V
µA
µA
nA
V
2/9

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भाग संख्याविवरणविनिर्माण
STE48NM50N-CHANNEL Power MOSFETST Microelectronics
ST Microelectronics


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