DataSheet.in

FDM3622 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDM3622
समारोह N-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDM3622?> डेटा पत्रक पीडीएफ

FDM3622 pdf
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25 oC, VGS = 10V, RθJA = 52oC/W)
Continuous (TC = 25 oC, VGS = 6V, RθJA = 52oC/W)
Continuous (TC = 100oC, VGS = 10V, RθJA = 52oC/W)
Pulsed
EAS Single Pulse Avalanche Energy (Note 2)
Power dissipation
PD Derate above 25oC
TJ, TSTG Operating and Storage Temperature
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance Junction to Ambient (Note 1a)
Thermal Resistance Junction to Ambient (Note 1b)
Thermal Resistance Junction to Case (Note 1)
Ratings
100
±20
4.4
3.8
2.8
Figure 4
190
2.4
19
-55 to 150
52
108
1.8
Units
V
V
A
A
A
mJ
W
mW/oC
oC
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
FDM3622
Device
FDM3622
Package
MicroFET3.3x3.3
Reel Size
7”
Tape Width
12mm
Quantity
3000 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 80V
VGS = 0V
TC = 100oC
VGS = ±20V
100
-
-
-
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 4.4A, VGS = 10V
ID = 3.8A, VGS = 6V,
ID = 4.4A, VGS = 10V,
TC = 150oC
2
-
-
-
Dynamic Characteristics
CISS
COSS
CRSS
RG
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0.5V, f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V
ID = 4.4A
Ig = 1.0mA
-
-
-
-
-
-
-
-
-
Typ Max Units
- -V
-1
µA
- 250
- ±100 nA
-
0.044
0.056
4
0.060
0.080
0.092 0.120
V
820 -
125 -
35 -
3.1 -
13 17
1.6 2.1
3.6 -
2.0 -
3.4 -
pF
pF
pF
nC
nC
nC
nC
nC
©2005 Fairchild Semiconductor Corporation
FDM3622 Rev. A
2
www.fairchildsemi.com

विन्यास 11 पेज
डाउनलोड[ FDM3622 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDM3622N-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English